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Investigation of the Surface Passivation of P+-Type Si Emitters by PECVD Silicon Carbide Films

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8 Author(s)
Vetter, M. ; Dept. d''Enginyeria Elettronica, Univ. Politecnica de Catalunya, Barcelona ; Ferre, R. ; Martin, I. ; Ortega, P.
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The surface passivation of an industrial applicable (e.g. screen printing) 60 Omegasq/ p+ boron emitter on Cz n-type c-Si wafers by amorphous SiCx films is investigated. A partial optimization of the deposition conditions of the SiCx films was performed resulting in an improved passivation quality of the SiCx films which also serves as anti-reflection coating. Passivation quality is determined by measuring the injection level dependency of the effective minority carrier lifetime using the quasi-steady state photoconductance method. Combining the information form the boron diffusion profile measured by SIMS and injection level dependent lifetime curves it can be concluded that a boron depletion layer formed during in-situ drive-in and oxidation has a detrimental effect on the passivation quality. Changing the diffusion conditions to prepare an improved boron profile with a similar sheet resistance should result in a further improvement of the passivation quality. This could include a reduction or a removal of the boron depletion layer at the emitter surface

Published in:

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on  (Volume:2 )

Date of Conference:

May 2006

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