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Field theory analysis of distributed microwave effects in high speed semiconductor lasers and their interconnection with passive microwave transmission lines

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4 Author(s)
Vahldieck, R. ; Lab. for Lightwave Electron., Microwaves & Commun., Victoria Univ., BC, Canada ; Shuoqi Chen ; Hang Jin ; Russer, P.

This paper present a rigorous field theory analysis of the distributed microwave effects in high speed semiconductor lasers by using a combination of a self-consistent complex finite difference method with the frequency-domain TLM method (FDTLM). The semiconductor laser is treated as a lossy multilayer slow-wave microstrip transmission line. The conductivity profile in the active layer is obtained by a self-consistent solution of the nonlinear semiconductor device equations. The attenuation factor, phase velocity and characteristic impedance of the semiconductor laser are presented for the unbiased and forward-biased case and compared with experimental results. On the basis of this analysis we present the interconnection effects between passive microwave transmission lines and laser diodes using airbridge or flip-chip transitions.<>

Published in:

Microwave Symposium Digest, 1995., IEEE MTT-S International

Date of Conference:

16-20 May 1995