Design of a Distributed Oscillator in 130 nm SOI MOS Technology

In this paper, the design and the results of a silicon-on-insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm
²
. A gain of 7 dB and a unity-gain bandwidth of 26 GHz are measured at 1.4 V supply voltage with a measured power consumption of 54 mW. The CDA circuit has been extended to design a cascode distributed oscillator (CDO) showing a 3 dBm carrier at 10 GHz oscillating frequency, for 2.5 V supply voltage