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Design of a Distributed Oscillator in 130 nm SOI MOS Technology

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8 Author(s)
M. Si Moussa ; Microwave Lab., Université catholique de Louvain, 3 Place du Levant, 1348 Louvain-la-Neuve, Belgium. Phone: +32 (0)10478099, Fax: +32 (0)10478705. e-mail: simouss@emic.ucl.ac.be ; C. Pavageau ; L. Picheta ; F. Danneville
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In this paper, the design and the results of a silicon-on-insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm2. A gain of 7 dB and a unity-gain bandwidth of 26 GHz are measured at 1.4 V supply voltage with a measured power consumption of 54 mW. The CDA circuit has been extended to design a cascode distributed oscillator (CDO) showing a 3 dBm carrier at 10 GHz oscillating frequency, for 2.5 V supply voltage

Published in:

2006 European Microwave Conference

Date of Conference:

10-15 Sept. 2006