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A Monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT Power Amplifier

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3 Author(s)
Comeau, J.P. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA ; Andrews, J.M. ; Cressler, J.D.

A monolithic 24 GHz SiGe HBT power amplifier (PA), with an output 1 dB compression point of 20 dBm, is presented. The circuit is biased from a 5.1 V supply in a class AB mode of operation, resulting in a power added efficiency (PAE) of 14 % at the 1 dB compression point. The SiGe PA has a small-signal gain of 12 dB at 24 GHz, and a return loss of 9.6 dB and 16 dB at the input and output ports, respectively. This SiGe PA leverages the increased voltage swing capabilities associated with the common-emitter / common-base configuration for SiGe HBTs incorporated in a cascode architecture

Published in:

Microwave Conference, 2006. 36th European

Date of Conference:

10-15 Sept. 2006