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Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications

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3 Author(s)
Benbakhti, B. ; Inst. d''Electronique, Univ. des Sci. et Technol. de Lille, Villeneuve d''Ascq ; Rousseau, M. ; De Jaeger, J.C.

Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a drop of the current gain transition frequency. So a compromise must be found depending on the operating frequency. In this paper, a theoretical 2D-hydrodynamic model is developed to study the impact of the FP on the device performance

Published in:

European Microwave Integrated Circuits Conference, 2006. The 1st

Date of Conference:

10-13 Sept. 2006

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