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Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application

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4 Author(s)
Wang-Chi Cheng ; Dept. of Electron. Eng., Chinese Univ. of Hong Kong ; Jian-Guo Ma ; Kiat-Seng Yeo ; Manh-Anh Do

This paper presents a fully integrated switchable transistor CMOS LNA for 2.1 GHz and 2.4 GHz applications. The LNA is designed using 0.18 mum 1P6M CMOS technology. It matches the input in two frequency bands easily without using extra on-chip spiral inductor, compared with (Zhenbiao Li, 2004), (Hashemi, 2001). The post layout simulation exhibits input matching with S11 of -12.9 dB at 2.1 GHz and -24.1 dB at 2.4 GHz respectively. Moreover, it achieves power gain of 14 dB and 14.6 dB, noise figure 3.6 dB and 3.7 dB, and IIP3 -1.3 dBm and 2.6 dBm respectively

Published in:

European Microwave Integrated Circuits Conference, 2006. The 1st

Date of Conference:

10-13 Sept. 2006