By Topic

Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wang-Chi Cheng ; Dept. of Electron. Eng., Chinese Univ. of Hong Kong ; Jian-Guo Ma ; Kiat-Seng Yeo ; Manh-Anh Do

This paper presents a fully integrated switchable transistor CMOS LNA for 2.1 GHz and 2.4 GHz applications. The LNA is designed using 0.18 mum 1P6M CMOS technology. It matches the input in two frequency bands easily without using extra on-chip spiral inductor, compared with (Zhenbiao Li, 2004), (Hashemi, 2001). The post layout simulation exhibits input matching with S11 of -12.9 dB at 2.1 GHz and -24.1 dB at 2.4 GHz respectively. Moreover, it achieves power gain of 14 dB and 14.6 dB, noise figure 3.6 dB and 3.7 dB, and IIP3 -1.3 dBm and 2.6 dBm respectively

Published in:

European Microwave Integrated Circuits Conference, 2006. The 1st

Date of Conference:

10-13 Sept. 2006