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A Low Noise and Low Power, SiGe-BiCMOS LNA for IEEE 802.11a Applications

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4 Author(s)
Kaynak, M. ; Fac. of Eng. & Natural Sci., Sabanci Univ., Istanbul ; Tekin, I. ; Bozkurt, A. ; Gurbuz, Y.

This paper presents a design methodology and measurement results of a low noise and low power fully-integrated LNA, compatible with all the three bands of IEEE 802.11a WLAN applications in the 5-6 GHz. Microwave monolithic integrated circuit (MMIC) has been fabricated using a commercial 0.35-mum silicon-germanium (SiGe) BiCMOS technology. We emphasized, in this paper, on the importance of simultaneous noise-input matching and extracting parasitic components through the use of electromagnetic modeling and simulation. Finally, the measurement results shows that SiGe-HBT, on-chip matched LNA exhibits a noise figure (NF) of 2.9 dB, gain > 14dB, input return loss < -10dB, output return loss < -10dB. The circuit consumes only 10.6 mW, under 3.3V supply voltage and has a die area of 595 times 925 mum2, including pads

Published in:

European Microwave Integrated Circuits Conference, 2006. The 1st

Date of Conference:

10-13 Sept. 2006

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