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This paper presents a general theory of junction diode and transistor shot noise in the region of low-level injection currents as dependent on frequency including lf and hf regions. Equations for noise figures in the three basic transistor connections are derived; these equations are believed to be new as well as in agreement with experimental results. Experimental curves at highlevel injection are presented. Coordination with previous theoretical and experimental data is shown to be satisfactory in the lf region. In the hf region, previous theoretical results, after proper adjustment, coincide with the present ones.