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Temperature Dependence of Junction Transistor Parameters

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1 Author(s)
Gartner, W.W. ; Signal Corps Eng. Labs., Fort Monmouth, N.J.

Based on existing design theories and the known temperature behavior of the semiconductor properties, the temperature variations of transistor characteristics are calculated for four representative types. The results, expressed in terms of four-pole parameters and equivalent circuits, may serve as a guide line in transistor design and temperature compensation of transistor circuits.

Published in:

Proceedings of the IRE  (Volume:45 ,  Issue: 5 )