By Topic

Theory of a Wide-Gap Emitter for Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Herbert Kroemer ; RCA Labs., Princeton, N.J.

In order to obtain a high current amplification factor, it is important in transistors that the ratio of the injected minority carrier current over the total emitter current, ¿, be close to unity, or that the quantity 1-¿, called the injection deficit, be as small as possible. It is shown that the injection deficit of an emitter can be decreased by several orders of magnitude if the emitter has a higher band gap than the base region. This effect can be utilized either in addition to the commonly used high emitter doping in order to eliminate the alpha falloff with current, or to decrease the high emitter doping in order to obtain a lower emitter capacitance. Decreasing the emitter capacitance in high-frequency transistors may be utilized either to extend their frequency range or to increase their power capabilities by increasing the area.

Published in:

Proceedings of the IRE  (Volume:45 ,  Issue: 11 )