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The forward and reverse current of fused junction silicon diodes are compared with the predicted equations arising from a simplified model for surface leakage. It is found that analysis of the forward current in the "exponential" region leads to resolution of the contributions of the junction and the leakage path. The activation energies of the parameters describing these two contributions were determined; the former agrees with the value of the band gap. The implications and deficiencies of the model are discussed.