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A New High Temperature Silicon Diode

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2 Author(s)
Thornton, C.G. ; Sylvania Elec. Prods., Inc., Elec. Div., Ipswich, Mass. ; Hanley, L.D.

A method of preparing high back voltage silicon by bombarding the surface with oxygen has been devised and a new type of point contact diode prepared. The diode is characterized by: (1) very low saturation currents of the order of 1 microampere, (2) high inverse operating voltages (70-200v), (3) very low barrier capacitance (<0.3 ¿¿f) and rapid recovery times, and (4) operation at elevated temperatures up to 200 degrees C.

Published in:

Proceedings of the IRE  (Volume:43 ,  Issue: 2 )

Date of Publication:

Feb. 1955

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