Cart (Loading....) | Create Account
Close category search window
 

A New High Temperature Silicon Diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Thornton, C.G. ; Sylvania Elec. Prods., Inc., Elec. Div., Ipswich, Mass. ; Hanley, L.D.

A method of preparing high back voltage silicon by bombarding the surface with oxygen has been devised and a new type of point contact diode prepared. The diode is characterized by: (1) very low saturation currents of the order of 1 microampere, (2) high inverse operating voltages (70-200v), (3) very low barrier capacitance (<0.3 ¿¿f) and rapid recovery times, and (4) operation at elevated temperatures up to 200 degrees C.

Published in:

Proceedings of the IRE  (Volume:43 ,  Issue: 2 )

Date of Publication:

Feb. 1955

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.