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Native oxidation of aluminum-containing III-V compound layers for increased current and optical confinement in semiconductor lasers

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5 Author(s)
Fiirst, S. ; Dept. of Electron. & Electr. Eng., Glasgow Univ. ; Farmer, C. ; Hobbs, L. ; de La Rue, R.
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We demonstrate the use of submicrometer oxidized in-layer current apertures to increase laser performance, and propose this technique for the enhancement of optical and current confinement in deep etched lasers

Published in:

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Date of Conference:

Oct. 2006