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Excess Noise and Avalanche Multiplication in InAlAs

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7 Author(s)
Goh, Y.L. ; Dept. of Electron. & Electr. Eng., Univ. of Sheffield ; Massey, D.J. ; Marshall, A.R.J. ; Ng, J.S.
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We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique

Published in:

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Date of Conference:

Oct. 2006

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