Study of Organic Thin-film Transistor on Silicon Nitride Gate Dielectrics for Integration in Display Circuits and Arrays

The gate dielectric plays an important function in establishing field-effect operation in organic thin-film transistors (OTFTs). A variety of gate dielectric materials has been investigated and reported for OTFTs. This paper focuses on the use of silicon nitride (SiN
_x
), deposited by plasma-enhanced chemical vapour deposition (PECVD). Attractive attributes of SiN
_x
include low temperature deposition, large-area capability, and good dielectric strength. Various compositions of SiN
_x
films, ranging from N-rich to Si-rich, are explored to determine an optimal choice for OTFT fabrication. The development of OTFT pixel circuits with silicon nitride dielectric for active matrix display backplanes will also be addressed