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Study of Organic Thin-film Transistor on Silicon Nitride Gate Dielectrics for Integration in Display Circuits and Arrays

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4 Author(s)
Li, F.M. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont. ; Wu, Yiliang ; Ong, Beng S. ; Nathan, A.

The gate dielectric plays an important function in establishing field-effect operation in organic thin-film transistors (OTFTs). A variety of gate dielectric materials has been investigated and reported for OTFTs. This paper focuses on the use of silicon nitride (SiNx ), deposited by plasma-enhanced chemical vapour deposition (PECVD). Attractive attributes of SiNx include low temperature deposition, large-area capability, and good dielectric strength. Various compositions of SiNx films, ranging from N-rich to Si-rich, are explored to determine an optimal choice for OTFT fabrication. The development of OTFT pixel circuits with silicon nitride dielectric for active matrix display backplanes will also be addressed

Published in:

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Date of Conference:

Oct. 2006