By Topic

Study of Organic Thin-film Transistor on Silicon Nitride Gate Dielectrics for Integration in Display Circuits and Arrays

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Li, F.M. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont. ; Wu, Y. ; Ong, B.S. ; Nathan, A.

The gate dielectric plays an important function in establishing field-effect operation in organic thin-film transistors (OTFTs). A variety of gate dielectric materials has been investigated and reported for OTFTs. This paper focuses on the use of silicon nitride (SiNx ), deposited by plasma-enhanced chemical vapour deposition (PECVD). Attractive attributes of SiNx include low temperature deposition, large-area capability, and good dielectric strength. Various compositions of SiNx films, ranging from N-rich to Si-rich, are explored to determine an optimal choice for OTFT fabrication. The development of OTFT pixel circuits with silicon nitride dielectric for active matrix display backplanes will also be addressed

Published in:

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Date of Conference:

Oct. 29 2006-Nov. 2 2006