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Controlled Crystal Structure in Patterned InAs Quantum Dot Formation By Selective Area MOCVD

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8 Author(s)
P. s. Wong ; Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106 ; N. Nuntawong ; L. Xue ; J. Tatebayashi
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We demonstrate the capability to control patterned quantum dot formation through adjusting the growth parameters inside the MOCVD reactor. Effects of altered crystallographic structure are measured using photoluminescence and SEM images

Published in:

LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society

Date of Conference:

Oct. 29 2006-Nov. 2 2006