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Zero-temperature-coefficient biasing point of partially depleted SOI MOSFET's

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4 Author(s)
Osman, A.A. ; Dept. of Electr. & Comput. Eng., Washington State Univ., Pullman, WA, USA ; Osman, M.A. ; Dogan, N.S. ; Imam, M.A.

Experimental and analytical results of the front gate bias (VGS) and the drain current (IDS) with the drain voltage (VDS) of partially depleted (PD) SOI MOSFET at the Zero-Temperature-Coefficient (ZTC) point over a very wide temperature range (25-300°C) are presented. Two distinct ZTC points are identified, one in the linear region and the other is in the saturation region. Additionally, the analysis takes into consideration the body effects, and mobility degradation with applied front gate bias. The analysis results are in excellent agreement with the experimental results

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 9 )