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Opposite-channel-based charge injection in SOI MOSFET's under hot carrier stress

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5 Author(s)
Zaleski, A. ; Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA ; Sinha, S.P. ; Ioannou, D.E. ; Campisi, George J.
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By operating one channel of a typical SOI MOSFET in avalanche while keeping the opposite channel accumulated, charge injection into the opposite gate takes place. Three independent experiments are described that demonstrate the occurrence of this opposite-channel based charge injection. The experimental results are in agreement with PISCES numerical simulations

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Electron Devices, IEEE Transactions on  (Volume:42 ,  Issue: 9 )