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The Frequency Response of Bipolar Transistors with Drift Fields

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1 Author(s)
Valdes, L.B. ; Bell Telephone Labs., Murray Hill, N.J. Now with Beckman Instruments, Inc., Fullterton, Calif.

The frequency response of bipolar transistors is calculated using a model which assumes that the spread in the transit time of minority carriers flowing from emitter to collector is the major factor in determining the frequency cutoff. The total emitter-to-collector transit time is determined by the combined effects of drift and diffusion but the spread in transit time is determined exclusively by diffusion. The analysis is adapted to point-contact transistors and checks experimental measurements of frequency cutoff in four groups of point-contact transistors having different structure and material parameters.

Published in:

Proceedings of the IRE  (Volume:44 ,  Issue: 2 )