By Topic

Frequency Variations of Junction-Transistor Parameters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
R. L. Pritchard ; Communications Research Section, Genl. Elec. Research Lab., Schenectady, N.Y.

A Theoretical solution for the frequency variation of the four small-signal parameters of a junction transistor has been obtained by extending Shockley's analysis and by taking account of space-charge-layer widening as suggested by J. M. Early. From the results of this solution, it has been possible to explain the experimentally observed frequency variation of open-circuit collector-base admittance of fused-junction p-n-p junction transistors that was reported earlier and is described here in more detail. The theoretical frequency variation of the current-amplification factor and of the other two small-signal parameters (open-circuit voltage-feedback factor h12 and short-circuit input impedance h11, for the grounded-base connection) also is discussed in some detail. Numerical results are included for each of the four parameters in the form of curves of normalized parameters versus relative frequency. Derivation of the voltage-current relations for the theoretical model is given separately in section II. The effect of base-spreading resistance is taken into account in the usual manner by addition of a lumped resistance to the base contact of the theoretical model.

Published in:

Proceedings of the IRE  (Volume:42 ,  Issue: 5 )