Cart (Loading....) | Create Account
Close category search window

Transistor Forming Effects in n-Type Germanium

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Valdes, L.B. ; Bell Telephone Laboratories, Murray Hill Laboratory, Murray Hill, N.J.

Some of the effects of electrical forming of the collector of an n-type germanium transistor are discussed. Evidence is presented for the existence of a region of p-type germanium underneath the formed electrode, together with some indication of the size of the formed region. These experiments lend support to the p-n hook mechanism in that they explain the observed high values of alpha in transistors. This relation is discussed.

Published in:

Proceedings of the IRE  (Volume:40 ,  Issue: 4 )

Date of Publication:

April 1952

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.