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Transistor Forming Effects in n-Type Germanium

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1 Author(s)
Valdes, L.B. ; Bell Telephone Laboratories, Murray Hill Laboratory, Murray Hill, N.J.

Some of the effects of electrical forming of the collector of an n-type germanium transistor are discussed. Evidence is presented for the existence of a region of p-type germanium underneath the formed electrode, together with some indication of the size of the formed region. These experiments lend support to the p-n hook mechanism in that they explain the observed high values of alpha in transistors. This relation is discussed.

Published in:

Proceedings of the IRE  (Volume:40 ,  Issue: 4 )