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Measurement of Minority Carrier Lifetime in Germanium

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1 Author(s)
Valdes, L.B. ; Bell Telephone Laboratories, Murray Hill, N.J.

A method for measuring the lifetime of minority carriers in germanium is described. Basically, it consists of liberating the carriers optically on a flat face of a crystal and measuring the concentration of minority carriers as a function of distance from the point of liberation. The mathematical model is analyzed and experimental results are presented here.

Published in:

Proceedings of the IRE  (Volume:40 ,  Issue: 11 )