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Some effects of the dependence of collector barrier (space-charge layer) thickness on collector voltage are analyzed. Transistor base thickness is shown to decrease as collector voltage is increased, resulting in an increase of the current-gain factor (Â¿) and a decrease in the emitter potential required to maintain any fixed emitter current. These effects are shown to lead to two new elements in the theoretical small-signal equivalent circuit. One, the collector conductance (gcÂ¿), is proportional to emitter current and varies inversely with collector voltage. This term is the dominant component of collector conductance in high-quality junction transistors. The other element, the voltage feedback factor (Â¿ec), is independent of emitter current, but varies inversely with collector voltage. The latter element is shown to modify the elements of the conventional equivalent tee network.