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A Unipolar "Field-Effect" Transistor

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1 Author(s)
W. Shockley ; Bell Telephone Laboratories, Inc., Murray Hill, N.J.

The theory for a new form of transistor is presented. This transistor is of the "field-effect" type in which the conductivity of a layer of semiconductor is modulated by a transverse electric field. Since the amplifying action involves currents carried pre-dominantly by one kind of carrier, the name "unipolar" is proposed to distinguish these transistors from point-contact and junction types, which are "bipolar" in this sense. Regarded as an analog for a vacuum-tube triode, the unipolar field-effect transistor may have a m¿ of 10 or more, high output resistance, and a frequency response higher than bipolar transistors of comparable dimensions.

Published in:

Proceedings of the IRE  (Volume:40 ,  Issue: 11 )