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Silicon P-N Junction Alloy Diodes

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2 Author(s)
Pearson, G.L. ; Bell Telephone Laboratories, Inc., Murray Hill, N.J. ; Sawyer, B.

A new type of p-n junction silicon diode has been prepared by alloying acceptor or donor impurities with n- or p-type silicon. The unique features of this diode are: (a) reverse currents as low as 10-10 amperes, (b) rectification ratios as high as 108 at 1 volt, (c) a Zener characteristic in which d(log I)/d(log V) may be an high as 1,500 over several decades of current, (d) a stable Zener voltage which may be fixed in the production process at values between 3 and 1,000 volts, and (e) ability to operate at ambient temperatures as high as 300°C.

Published in:

Proceedings of the IRE  (Volume:40 ,  Issue: 11 )