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Properties of Silicon and Germanium

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1 Author(s)
Esther M. Conwell ; Bell Telephone Laboratories, Inc., Murray Hill, N.J. On leave from Brooklyn College, Brooklyn, N.Y.

This article provides the latest experimental information on those fundamental properties of germanium and silicon which are of device interest, currently or potentially. Electrical properties, especially carrier density and mobility, have been treated in greatest detail. Descriptive material has been provided to the extent necessary to give physical background.

Published in:

Proceedings of the IRE  (Volume:40 ,  Issue: 11 )