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High-Power 1.3-μm Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy

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6 Author(s)
S. K. Ray ; Dept. of Electron. & Electr. Eng., Univ. of Sheffield ; T. L. Choi ; K. M. Groom ; H. Y. Liu
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In this letter, we demonstrate the improved performance of 1.3-mum seven-layered InAs-GaAs quantum-dot superluminescent light-emitting diodes by the engineering of the epitaxial growth conditions alone, namely the thickness of the low-temperature GaAs spacer layer between quantum-dot layers. For laser devices, a significant reduction in threshold current density and increase in external efficiency is observed, while for superluminescent diode structures, a ~4 fold increase in CW power at a given drive current is obtained

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IEEE Photonics Technology Letters  (Volume:19 ,  Issue: 2 )