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A modular, high performance, 2 μm CCD-BiCMOS process technology for application specific image sensors and image sensor systems on a chip

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9 Author(s)
Guidash, R.M. ; Microelectron. Technol. Dov., Eastman Kodak Co., Rochester, NY, USA ; Lee, P.P.K. ; Andrus, J.M. ; Ciccarelli, A.S.
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A 2 μm BiCMOS process module has been developed for incorporation into existing charge-coupled device (CCD) image sensor processes. The modular process architecture allows integration of CMOS, NPN bipolar or BiCMOS circuits without affecting the baseline CCD characteristics, and enables on-chip integration of desired analog and digital circuit functions with the image sensor. To our knowledge this is the first demonstration of high performance CCD, 2 μm CMOS, and an isolated vertical NPN integrated on the same chip

Published in:

ASIC Conference and Exhibit, 1994. Proceedings., Seventh Annual IEEE International

Date of Conference:

19-23 Sep 1994

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