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InGaAs-InP superlattice electroabsorption waveguide modulator

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6 Author(s)
Neitzert, H.C. ; Centro Studi e Lab. Telecommun. SpA, Torino, Italy ; Cacciatore, C. ; Campi, D. ; Rigo, C.
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An electroabsorption waveguide modulator with an extinction ratio for TE-polarized light at 1550 nm of more than 20 dB for a voltage swing of less than 3 V, and low insertion losses has been realized, which exploits the Wannier-Stark effect in an InGaAs-InP short period superlattice, grown by chemical beam epitaxy. Even for a fixed voltage swing of 2.6 V, a good transmission contrast has been obtained in a wide wavelength range.<>

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Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 8 )