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GaxIn/sub 1-x/AsyP/sub 1-y/-InP tensile-strained quantum wells for 1.3-μm low-threshold lasers

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4 Author(s)
Yokouchi, N. ; R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.

Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/-InP tensile-strained multiple quantum wells (MQWs) grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) are studied for the application to 1.3-/spl mu/m lasers. High-resolution X-ray diffraction curves show good agreement with theoretical simulation. Clear energy separation of light hole and heavy hole bands is observed in the room temperature photoluminescence measurement. Threshold characteristics of -1.15% tensile-strained MQW lasers with graded index separate confinement heterostructure (GRINSCH) are investigated. The minimum threshold current density per well (J/sub th//N/sub w/) for infinite cavity length obtained is 100 A/cm/sup 2/ for the device with a well number of 3. Tensile strain dependence of J/sub th//N/sub w/ for an infinite cavity is also clarified.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 8 )

Date of Publication:

Aug. 1995

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