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Low-threshold, high-power, 1.3-μm wavelength, InGaAsP-InP etched-facet folded-cavity surface-emitting lasers

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6 Author(s)
C. -P. Chao ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; D. Z. Garbuzov ; G. -J. Shiau ; S. R. Forrest
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A 1.3-μm wavelength, InGaAsP-InP folded-cavity, surface-emitting laser with CH4-H2 reactive ion-etched vertical and 45/spl deg/ angled facets was demonstrated for the first time. Continuous-wave threshold currents of 32 mA have been achieved, with >15 mW CW power for the surface-emitted light. These surface-emitting lasers with two dry-etched facets are suitable for wafer-level testing and for monolithic integration with other InP-based photonic devices.

Published in:

IEEE Photonics Technology Letters  (Volume:7 ,  Issue: 8 )