Low-threshold, high-power, 1.3-μm wavelength, InGaAsP-InP etched-facet folded-cavity surface-emitting lasers

A 1.3-μm wavelength, InGaAsP-InP folded-cavity, surface-emitting laser with CH
₄
-H
₂
reactive ion-etched vertical and 45/spl deg/ angled facets was demonstrated for the first time. Continuous-wave threshold currents of 32 mA have been achieved, with >15 mW CW power for the surface-emitted light. These surface-emitting lasers with two dry-etched facets are suitable for wafer-level testing and for monolithic integration with other InP-based photonic devices.