By Topic

High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
T. Higashi ; Opt. Semicond. Devices Lab., Fujitsu Labs. Ltd., Kanagawa, Japan ; T. Takeuchi ; K. Morito ; M. Matsuda
more authors

We fabricated 1.5-μm semi-insulating buried heterostructure (SI-BH) lasers with InGaAsP-InP strained-layer multiple-quantum wells using a reactive ion etching (RIE) technique for mesa definition. A very high CW operating temperature of 150/spl deg/C was obtained in a 300-μm-long laser whose rear facet was HR-coated.

Published in:

IEEE Photonics Technology Letters  (Volume:7 ,  Issue: 8 )