By Topic

InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 μm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
M. Ochiai ; Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA ; H. Temkin ; S. Forouhar ; R. A. Logan

Buried heterostructure lasers with highly strained InGaAs-InGaAsP active regions, emitting at 2 μm have been fabricated and tested. The lasers exhibited threshold current densities of 500 A/cm2 for 1-mm-long cavities, an internal loss of 11 cm/sup -1/, and characteristic temperatures as high as 50/spl deg/C. The gain characteristics were also investigated and a linewidth enhancement factor of 8 was determined.

Published in:

IEEE Photonics Technology Letters  (Volume:7 ,  Issue: 8 )