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InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 μm

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4 Author(s)
Ochiai, M. ; Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA ; Temkin, H. ; Forouhar, S. ; Logan, R.A.

Buried heterostructure lasers with highly strained InGaAs-InGaAsP active regions, emitting at 2 μm have been fabricated and tested. The lasers exhibited threshold current densities of 500 A/cm2 for 1-mm-long cavities, an internal loss of 11 cm/sup -1/, and characteristic temperatures as high as 50/spl deg/C. The gain characteristics were also investigated and a linewidth enhancement factor of 8 was determined.

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 8 )