Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

CMOS Device and Circuit Degradations Subject to HfO2 Gate Breakdown and Transient Charge-Trapping Effect

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Chuanzhao Yu ; Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL ; Jiann-Shiun Yuan

The gate leakage current of HfO2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 1 )