Referenced Items are not available for this document.
The gate leakage current of HfO2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behavior after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier
Published in:
Electron Devices, IEEE Transactions on
(Volume:54
,
Issue:
1
)
Date of Publication: Jan. 2007
- Page(s):
- 59 - 67
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 9257643
- Digital Object Identifier :
- 10.1109/TED.2006.887517
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 December 2006
- Issue Date :
- Jan. 2007
- Sponsored by :
- IEEE Electron Devices Society
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