By Topic

Surface-Potential Solution for Generic Undoped MOSFETs With Two Gates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Shangguan, W.Z. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Xing Zhou ; Chandrasekaran, K. ; Zhaomin Zhu
more authors

We present a rigorously derived analytical Poisson solution for undoped semiconductors and apply the general solution to generic MOSFETs with two gates, unifying different types such as silicon-on-insulator (SOI) and symmetric and asymmetric double gate (s-DG and a-DG) structures. The Newton-Raphson method is used to solve surface-potential equations resulting from the application of boundary conditions to the general Poisson solution, with an initial guess that is very close to the exact solution. The universal initial guess can be used as an approximate explicit solution for fast evaluation, while the iterative solution can be used for benchmark tests. The results demonstrate the unification of surface-potential solutions having an accuracy of 10-15 V for SOI, a-DG, and s-DG MOSFETs, which are achieved within two to six iterations. Furthermore, the explicit solution yields less than 3.5% error for back-to-front-gate oxide thickness ratios larger than 25

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 1 )