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Performance Enhancement of the nMOSFET Low-Noise Amplifier by Package Strain

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8 Author(s)
Hua, W.-C. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Chang, H.-L. ; Wang, T. ; Lin, C.-Y.
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The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is ~0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NF reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions

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Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 1 )