By Topic

An Organic FET SRAM With Back Gate to Increase Static Noise Margin and Its Application to Braille Sheet Display

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Makoto Takamiya ; VLSI Design & Educ. Center, Univ. of Tokyo ; Tsuyoshi Sekitani ; Yusaku Kato ; Hiroshi Kawaguchi
more authors

An integrated system of organic FETs (OFETs) and plastic actuators is proposed, and it is applied to a Braille sheet display. Some circuit technologies are presented to enhance the speed and the lifetime for the Braille sheet display. An OFET SRAM is developed to hide the slow transition of the actuators. Developed five-transistor SRAM cell reduces the number of the bit lines by one-half and reduces the SRAM cell area by 20%. Pipelining the write-operation reduced the SRAM write-time by 69%. Threshold voltage control technology using a back gate increased the static noise margin of SRAM and compensated for the chemical degradation of the OFETs after 15 days. The oscillation frequency tuning range from -82% to +13% in a five-stage ring oscillator is also demonstrated with the threshold voltage control technology. The overdrive techniques for the driver OFETs reduced the transition time of the actuator from 34 s to 2 s. These developed circuit technologies achieved the practical 1.75-s operation to change all 144 Braille dots on Braille sheet display and will be essential for the future large area electronics made with OFETs

Published in:

IEEE Journal of Solid-State Circuits  (Volume:42 ,  Issue: 1 )