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Resistive Switching Mechanism in ZnxCd1 − xS Nonvolatile Memory Devices

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6 Author(s)
Zheng Wang ; Dept. of Electr. Eng., Stanford Univ., CA ; Griffin, Peter B. ; McVittie, Jim ; Wong, Simon
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Nonvolatile information storage devices based on an abrupt resistance switch when an electric bias is applied are very attractive for future memory applications. Recently, such a resistance switch was described in ferroelectric ZnxCd1-xS, but the mechanism of switching remains controversial. Here, we present results that elucidate the mechanism, showing that a metal needs to be easily oxidized and is capable of diffusing into the ZnCdS film as a cation impurity forming a filamentary metallic conduction path

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 1 )

Date of Publication:

Jan. 2007

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