Referenced Items are not available for this document.
Nonvolatile information storage devices based on an abrupt resistance switch when an electric bias is applied are very attractive for future memory applications. Recently, such a resistance switch was described in ferroelectric ZnxCd1-xS, but the mechanism of switching remains controversial. Here, we present results that elucidate the mechanism, showing that a metal needs to be easily oxidized and is capable of diffusing into the ZnCdS film as a cation impurity forming a filamentary metallic conduction path
Published in:
Electron Device Letters, IEEE
(Volume:28
,
Issue:
1
)
Date of Publication: Jan. 2007
- Page(s):
- 14 - 16
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9258155
- Digital Object Identifier :
- 10.1109/LED.2006.887640
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 26 December 2006
- Issue Date :
- Jan. 2007
- Sponsored by :
- IEEE Electron Devices Society
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