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High-Performance Metal–Insulator–Metal Capacitors Using Amorphous BaSm2Ti4O12 Thin Film

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5 Author(s)
Young Hun Jeong ; Dept. of Mater. Sci. & Eng., Korea Univ., Seoul ; Jong Bong Lim ; Nahm, S. ; Sun, Ho-Jung
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The dielectric properties of the amorphous BaSm2Ti4O12 (BSmT) film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300 degC exhibited a high capacitance density of 9.9 fF/mum2 at 100 kHz and a low leakage current density of 1.790 nA/cm2 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/degC at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor

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Electron Device Letters, IEEE  (Volume:28 ,  Issue: 1 )