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Electrical Characterization of ZrO2/Si Interface Properties in MOSFETs With ZrO2 Gate Dielectrics

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2 Author(s)
Liu, Chuan-Hsi ; Dept. of Electron. Eng., Ming Chuan Univ., Taoyuan ; Chiu, Fu-Chien

MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS, IDS-VGS , and gated diode characteristics were analyzed to investigate the ZrO2/Si interface properties. The interface trap density (D it) was determined to be about 7.4times1012 cm -2middoteV-1 using subthreshold swing measurement. The surface-recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (tau 0,FIJ) measured from the gated diodes were about 3.5times10 3 cm/s and 2.6times10-6 s, respectively. The effective capture cross section of surface state (sigmas) was determined to be about 5.8times10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 1 )