By Topic

A Pillar-Shaped Antifuse-Based Silicon Chemical Sensor and Actuator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kovalgin, A.Y. ; MESA Res. Inst., Twente Univ., Enschede ; Holleman, J. ; Iordache, G.

We designed a silicon-processing compatible, simple, and cheap device operating at a power down to sub-muW. It has a pillar-shaped structure with a nanoscopic (10-100 nm in size) conductive link (the so-called antifuse) created between two electrodes separated by a SiO 2 layer. The device exhibits a diode-like behavior due to the depletion effects in the mono-silicon pillar. The device is capable of maintaining a microscopic hot-surface area of several hundreds degrees centigrade. The size of the hot area and its temperature can be manipulated by the sign of the applied bias. Two different heat-generation mechanisms (i.e., dissipation at a resistor and a non-radiative recombination of carriers) are proposed and modelled. Such a device can be used as a heat source, as a light source, and as a sensitive detector of light and heat. In this paper, we describe thermo-electrical properties of the fabricated devices and demonstrate their feasibility to perform as gas-, adsorption-, desorption sensors, and as units for activating chemisorption/decomposition of gaseous precursors, i.e., micro-reactors

Published in:

Sensors Journal, IEEE  (Volume:7 ,  Issue: 1 )