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Tunnel Diode Delay-Line Memory

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2 Author(s)
Harris, H.H. ; Components Division, IBM Corporation, Poughkeepsie, N.Y. ; Pricer, W.D.

This paper describes a memory system wherein bits of information are stored serially in time on electrical delay lines, The simplicity and speed of the basic storage cell makes large high-speed stores of this sort feasible. The paper stresses the basic principles of operation. A brief description of one such system model built to demonstrate these principles is included.

Published in:

Electronic Computers, IEEE Transactions on  (Volume:EC-13 ,  Issue: 3 )