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SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

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8 Author(s)

An advanced commercial 2Gbit NAND flash memory (90 nm technology, one bit/cell) has been characterized for TID and heavy ion SEE. Results are qualitatively similar to previous flash results in most respects, but we also detected a new dynamic failure mode

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Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 6 )