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Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

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7 Author(s)
F. Miller ; Corporate Res. Center, Eur. Aeronaut. Defence & Space Co., Suresnes ; A. Luu ; F. Prud'homme ; P. Poirot
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This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area

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IEEE Transactions on Nuclear Science  (Volume:53 ,  Issue: 6 )