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Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure

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15 Author(s)
Metcalfe, J. ; Santa Cruz Inst. for Particle Phys., California Univ., Santa Cruz, CA ; Dorfan, D.E. ; Grillo, A.A. ; Jones, A.
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For the potential use in future high luminosity applications in high energy physics (HEP) [e.g., the Large Hadron Collider (LHC) upgrade], we evaluated the radiation tolerance of a candidate technology for the front-end of the readout application-specific integrated circuit (ASIC) for silicon strip detectors. The devices investigated were first-generation silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The current gain as a function of collector current has been measured at several stages: before and after irradiation with 24-GeV protons up to fluences of 1016 p/cm2, and after annealing at elevated temperature. The analog section of an amplifier for silicon strip detectors typically has a special front transistor, chosen carefully to minimize noise and usually requiring a larger current than the other transistors, and a large number of additional transistors used in shaping sections and for signal-level discrimination. We discuss the behavior of both kinds of transistors, with a particular focus on issues of noise, power, and radiation limitations

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Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 6 )