Cart (Loading....) | Create Account
Close category search window

Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Laird, J.S. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA ; Hirao, T. ; Onoda, S. ; Itoh, Hisayoshi
more authors

We illustrate inherent subtle differences between Single Event Transients generated by above bandgap picosecond lasers and MeV heavy ions in a Si junction by comparing transient currents collected on a p-i-n structure using an MeV ion microbeam and picosecond laser with variable spot size. Differences between the ion and laser results are discussed and Synopsis Technology CAD simulations are employed to examine differences in plasma dynamics leading to the observed transient current dependence on initial track conditions

Published in:

Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 6 )

Date of Publication:

Dec. 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.