By Topic

Radiation-Induced Modifications of the Electrical Characteristics of Nanocrystal Memory Cells and Arrays

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Gasperin, A. ; Dipt. di Ingegneria dell''Informazione, Padova Univ. ; Cester, A. ; Wrachien, N. ; Paccagnella, A.
more authors

Proton irradiation of nanocrystals memories produces peculiar radiation effects on the electrical characteristics of these devices, owing to their thin tunnel oxide and to the presence of nanocrystals replacing the conventional flash memory floating gate. In this work, we show that the data retention capability is compromised only after high fluences and that irradiated devices do not show accelerated degradation during subsequent electrical stresses. The presence of nanocrystals instead of a floating gate reduces also the quantity of charge lost during irradiation, indicating these devices as possible candidates for space and avionic environments

Published in:

Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 6 )