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X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI

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9 Author(s)
Bellini, M. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA ; Jun, B. ; Tianbing Chen ; Cressler, J.D.
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X-ray total ionizing dose effects in both fully-depleted and partially-depleted SiGe HBT-on-SOI transistors are investigated at room and at cryogenic temperatures for the first time. Devices irradiated in grounded and forward-active mode configurations exhibit a different behavior depending on the collector doping of the device. The degradation produced by 10 keV x-rays is compared to previously reported 63 MeV proton results on the same fully-depleted SiGe HBT-on-SOI devices, showing decreased degradation for proton irradiation. Both collector and substrate bias are shown to affect the two-dimensional nature of the current flow in these devices, resulting in significant differences in the avalanche multiplication characteristics (hence, breakdown voltage) across temperature

Published in:

Nuclear Science, IEEE Transactions on  (Volume:53 ,  Issue: 6 )

Date of Publication:

Dec. 2006

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