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Integrated Low-Loss CMOS Active Rectifier for Wirelessly Powered Devices

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3 Author(s)
Yat-Hei Lam ; Dept. of Electron. & Comput. Eng, Hong Kong Univ. of Sci. & Technol. ; Wing-Hung Ki ; Chi-ying Tsui

A low-loss CMOS full-wave active rectifier is presented. It consists of two dynamically biased and symmetrically matched active diodes each realized by an nMOS switch driven by a 2-ns voltage comparator with reverse-current control. With a load of 1.8-kOmega, the rectified dc voltage is 3.22 V and 1.2 V for a 13.56 MHz ac sinusoidal input voltage of 3.5 V and 1.5 V respectively. It is fabricated in a 0.35-mum CMOS process with an active area of 0.0055 mm 2, with no low-threshold devices and on-chip passive components

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:53 ,  Issue: 12 )